In this study, we devised an innovative cartridge-type modular photodetector designed to boost the photoresponse of two-dimensional (2D) materials by utilizing up-conversion particles (UCPs) in selective infrared (IR) regions beyond the bandgap. The merit of this structure is that the incident near-infrared or short wave infrared (SWIR) light, after passing through the 2D SnSe channel layer, is converted into visible light via the up-conversion effect and then reabsorbed by SnSe. To further optimize the photoresponse improvement in the SWIR region, we fine-tuned the dopant material and its concentration for the UCPs, attaining a 3.28-fold enhancement in the up-conversion efficiency. Using these approaches, we accomplished a 9.74-fold enhancement in the selective photoresponse within the SWIR region of 2D SnSe. We extended this approach to a 2D MoS