Quenching of Defect-Induced Photoluminescence in a Boron-Nitride and Carbon Hetero-nanotube.

• Tác giả: Yu-Ming Chang, Wei-Liang Chen, Desman Perdamaian Gulo, Esko I Kauppinen, Hsiang-Lin Liu, Ming Liu, Shigeo Maruyama, Riichiro Saito, Atsushi Taguchi, Hikaru Takehara, Takashi Taniguchi, Nguyen Tuan Hung, Shuhui Wang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 553.453 Tin
• Thông tin xuất bản: United States : The journal of physical chemistry letters , 2025
• Bộ sưu tập: NCBI
• ID: 14997

Tóm tắt

Using a 266 nm laser, we simultaneously observe Raman and photoluminescence (PL) spectra of vertically aligned boron-nitride nanotubes (VA-BNNT) and single-walled carbon nanotubes (SWNT) encapsulated by boron nitride (VA-SWNT@BNNT). The larger PL intensity in VA-BNNT compared to that of the h-BN single crystal suggests that VA-BNNT contains more defect states. VA-SWNT@BNNT exhibits two multiphonon Raman peaks at 3033 and 3142 cm