Optimization of Thermoelectric Performance in p-Type SnSe Crystals Through Localized Lattice Distortions and Band Convergence.

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Tác giả: Ghulam Abbas, Yuede Cao, RuiHua Chen, Yuexing Chen, J Andreas Larsson, Fu Li, Suniya Siddique, Manzar Mushaf Yaqoob, Dongping Zhang, Jian Zhao, Zhuanghao Zheng

Ngôn ngữ: eng

Ký hiệu phân loại:

Thông tin xuất bản: Germany : Advanced science (Weinheim, Baden-Wurttemberg, Germany) , 2025

Mô tả vật lý:

Bộ sưu tập: NCBI

ID: 160393

Crystalline thermoelectric materials, especially SnSe crystals, have emerged as promising candidates for power generation and electronic cooling. In this study, significant enhancement in ZT is achieved through the combined effects of lattice distortions and band convergence in multiple electronic valence bands. Density functional theory (DFT) calculations demonstrate that cation vacancies together with Pb substitutional doping promote the band convergence and increase the density of states (DOS) near the Fermi surface of SnSe, leading to a notable increase in the Seebeck coefficient (S). The complex defects formed by Sn vacancies and Pb doping not only boost the Seebeck coefficient but also optimize carrier concentration (n
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