Circular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage.

 0 Người đánh giá. Xếp hạng trung bình 0

Tác giả: Feiliang Chen, Ruihan Huang, Hao Jiang, Mo Li, Yang Liu, Lixin Sun, Xiangdong Wang, Yazhou Wei, Fan Yang, Jian Zhang, Haiquan Zhao

Ngôn ngữ: eng

Ký hiệu phân loại: 371.217 Entrance requirements

Thông tin xuất bản: Germany : Advanced science (Weinheim, Baden-Wurttemberg, Germany) , 2025

Mô tả vật lý:

Bộ sưu tập: NCBI

ID: 160397

As electronics advance toward higher performance and adaptability in extreme environments, traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) face challenges due to physical constraints such as Boltzmann's law and short-channel effects. Nanoscale air channel transistors (NACTs) present a promising alternative, leveraging their vacuum-like channel and Fowler-Nordheim tunneling characteristics. In this study, a novel circular gate NACT (CG-NACT) is purposed, fabricated on a 4-inch silicon-based wafer using a CMOS-compatible process. By employing an innovative gate control mechanism, the transistors achieve an ultralow SS of only 0.15 mV dec
Tạo bộ sưu tập với mã QR

THƯ VIỆN - TRƯỜNG ĐẠI HỌC CÔNG NGHỆ TP.HCM

ĐT: (028) 36225755 | Email: tt.thuvien@hutech.edu.vn

Copyright @2024 THƯ VIỆN HUTECH