Random telegraph signals in semiconductor devices

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Tác giả: Cor L Claeys, Eddy Simoen

Ngôn ngữ: eng

ISBN-13: 978-0750312721

ISBN-13: 978-0750312738

ISBN-13: 978-0750312745

Ký hiệu phân loại: 621.38152 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting

Thông tin xuất bản: Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, 2016

Mô tả vật lý: 1 online resource (various pagings) : , illustrations (some color).

Bộ sưu tập: Tài liệu truy cập mở

ID: 160779

Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology.
Includes bibliographical references.
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