Two-step growth procedure for homogeneous GaN NW arrays on graphene.

• Tác giả: Edmond Cambril, Noëlle Gogneau, Jean-Christophe Harmand, Ludovic Largeau, Ali Madouri, Dyhia Tamsaout, Maria Tchernycheva, Laurent Travers
• Ngôn ngữ: eng
• Ký hiệu phân loại: 641.5612 Cooking
• Thông tin xuất bản: England : Nanotechnology , 2025
• Bộ sưu tập: NCBI
• ID: 162334

Tóm tắt

Growth of GaN nanowires (NWs) on graphene substrates is carried out by plasma-assisted molecular beam epitaxy. We test a two-step growth procedure consisting of a first stage at relatively low temperature followed by a second stage at higher temperature. We investigate the impact of this process on the usually long incubation time which precedes the first GaN nucleation events on graphene. We also examine how the selectivity of growth between graphene and the surrounding SiO