Characterization and Modeling of Interfacial Photogating Effect in Graphene Field-Effect Transistor Photodetectors on Silicon.

• Tác giả: Michael P Cooney, Kalani H Ellepola, Leslie Howe, Nusrat Jahan, James Li, Brady Talbert, Nguyen Q Vinh
• Ngôn ngữ: eng
• Ký hiệu phân loại: 968.91 *Zimbabwe
• Thông tin xuất bản: United States : ACS applied electronic materials , 2025
• Bộ sưu tập: NCBI
• ID: 170313

Tóm tắt

 Infrared photodetection of silicon is prevented by the bandgap energy at wavelengths longer than approximately 1100 nm (∼1.12 eV) at room temperature, while silicon is the most used in modern electronics. Of particular interest is the performance of silicon for photodetectors in the infrared region beyond the silicon bandgap. Here, we demonstrate graphene field-effect transistor photodetectors on silicon with high photoconductive gain and photodetection capability extending to the infrared region. These devices have a photoresponsivity of >
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