Doping has been extensively studied as an effective means of modulating the electrical properties of two-dimensional (2D) semiconductors. However, precise methods for p- and n-type doping in specific regions remain underdeveloped, hindering high-performance devices and integrated circuits. We present a novel technique, template-assisted dry transfer doping (TADTD), which enables precise control over doping regions, patterns, polarities, and levels in 2D semiconductors. Utilizing photolithography, TADTD allows for the creation of patterned dopant films that are transferred to MoTe