Two-dimensional (2D) material (graphene, MoS2, MXene, etc.) /group-III nitride (GaN, AlN, and their compounds) hetero-structures have been given special attention, on account of their prospective applications in remarkable performance broadband photodetectors, light-emitting diodes, solar cells, etc. The utilization of advantages of the above two kind materials provides a solution to the dilemma of the degradation of device performance and reliability caused by carrier mobility, lattice mismatch, interface, etc. Therefore, the summary of progress of 2D material/group-III nitride hetero-structures and devices is urgent. In this work, it elaborates on interface interaction and stimulation, growth and device of 2D material/group-III nitride hetero-structures. Initially, it investigates the properties of the hetero-structures, combining the theoretical calculations on interface interaction of the heterojunction with experimental study, particularly emphasizing on interface effects on the hetero-structures performance. Subsequently, the growth of 2D material/group-III nitride hetero-structures are introduced in detail. The problems solved by the advancing synthesis strategies and the formation mechanisms are discussed in particular. Afterwards, based on the 2D material/group-III nitride hetero-structures, devices extending from optoelectronics, electronics, to photocatalyst and sensors, etc., are reviewed. Finally, the prospect of 2D material/group-III nitride hetero-structures and devices is speculated to pave the way for the further promotion.