Doping Janus MoSSe monolayer with Al/Ga and P/As atoms, and their clusters: effective methods for the band structure and magnetism engineering.

• Tác giả: J Guerrero-Sanchez, Chu Viet Ha, D M Hoat, Duy Khanh Nguyen
• Ngôn ngữ: eng
• Thông tin xuất bản: England : RSC advances , 2025
• Bộ sưu tập: NCBI
• ID: 185607

Tóm tắt

In this work, new doping approaches are proposed towards effective band structure and magnetism engineering of Janus MoSSe monolayer. In its pristine form, MoSSe monolayer is a direct gap semiconductor. Magnetic semiconductor nature is obtained by doping with Al/Ga atoms at Mo sublattice and P atom at S sublattice. Herein, overall magnetic moments of 3.00/2.96 and 1.00