Low-Power and High-Gain Organic Transistors Achieved Through an Ideal Contact Approaching the Schottky-Mott Limit.

• Tác giả: Wei Deng, Jiansheng Jie, Rui Pan, Jianchao Qi, Xiaobin Ren, Fangming Sheng, Jialin Shi, Xiujuan Zhang, Yujian Zhang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 594.38 *Pulmonata
• Thông tin xuất bản: United States : ACS applied materials & interfaces , 2025
• Bộ sưu tập: NCBI
• ID: 185749

Tóm tắt

The advancement of flexible electronics necessitates low-power and high-gain organic transistors endowed with the capability to amplify feeble signals, meeting the demands of signal processing and transmission. Despite a myriad of endeavors, the intrinsic gain (