Sub-Nanometer Equivalent Oxide Thickness and Threshold Voltage Control Enabled by Silicon Seed Layer on Monolayer MoS

• Tác giả: Robert K A Bennett, Anh Tuan Hoang, Marc Jaikissoon, Kwanpyo Kim, Jung-Soo Ko, Sol Lee, Andrew J Mannix, Kathryn Neilson, Eric Pop, Krishna C Saraswat, Kirstin Schauble
• Ngôn ngữ: eng
• Ký hiệu phân loại: 629.13637 Aerospace engineering
• Thông tin xuất bản: United States : Nano letters , 2025
• Bộ sưu tập: NCBI
• ID: 192435

Tóm tắt

Low-power transistors based on two-dimensional (2D) semiconductors require ultrathin gate insulators, whose atomic layer deposition (ALD) has been difficult without adequate surface preparation. Here, we achieve sub-1 nm equivalent oxide thickness (EOT) on monolayer MoS