Field-effect transistors based on nickel oxide doped with nitrogen semiconductor ferroelectrics for ultralow voltage switch (1 μV), low subthreshold swing and memory.

• Tác giả: Martino Aldrigo, Daniela Dragoman, Mircea Dragoman, Octavian Ligor, Damir Mladenovic, Florin Nastase, Silviu Vulpe
• Ngôn ngữ: eng
• Ký hiệu phân loại: 336.2417 Taxes
• Thông tin xuất bản: England : Nanotechnology , 2025
• Bộ sưu tập: NCBI
• ID: 199227

Tóm tắt

A single field-effect transistor (FET) based on nitrogen doped-nickel oxide (NiON) semiconductor ferroelectric shows an ultralow voltage switch at a gate voltage value of just 1 μV and a subthreshold swing (SS) of 55 mV/decade. The same FET acts as a ferroelectric capacitive non-volatile memory between the drain and the ground. All these features are retrieved in a FET based on NiON grown on a thin layer of aluminum oxide (Al2O3), which was deposited on a doped silicon (Si) wafer. After one year, we retrieved the same values in our devices without any thermal annealing or other procedures to wake up the ferroelectricity. .