Physics and Technology of Silicon Carbide Devices

 0 Người đánh giá. Xếp hạng trung bình 0

Tác giả: Yasuto Hijikata

Ngôn ngữ: eng

ISBN-13: 978-9535162834

Ký hiệu phân loại: 345.7302523 Criminal law

Thông tin xuất bản: Croatia : IntechOpen, 2012

Mô tả vật lý: 1 electronic resource (414 p.)

Bộ sưu tập: Tài liệu truy cập mở

ID: 206711

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Tạo bộ sưu tập với mã QR

THƯ VIỆN - TRƯỜNG ĐẠI HỌC CÔNG NGHỆ TP.HCM

ĐT: (028) 71010608 | Email: tt.thuvien@hutech.edu.vn

Copyright @2024 THƯ VIỆN HUTECH