AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

• Tác giả: Jutta Kühn
• Ngôn ngữ: eng
• ISBN-13: 978-3866446151
• ISBN: KSP/1000021579
• Ký hiệu phân loại: 621.381535 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting
• Thông tin xuất bản: Karlsruhe : KIT Scientific Publishing, 2011
• Mô tả vật lý: 1 electronic resource (XI, 230 p. p.)
• Bộ sưu tập: Tài liệu truy cập mở
• ID: 228482

Tóm tắt

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.