High voltage and high current density vertical GaN power diodes [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.3152 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting
• Thông tin xuất bản: Washington, D.C. : Oak Ridge, Tenn. : United States. National Nuclear Security Administration ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2016
• Mô tả vật lý: Size: p. 1170-1171 : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 255815
• Chủ đề: 1. 30 direct energy conversion; 2. 42 engineering

Tóm tắt

 We report on the realization of a GaN high voltage vertical p-n diode operating at >
  3.9 kV breakdown with a specific on-resistance <
  0.9 m?.cm<
 sup>
 2<
 /sup>
 . Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density >
  1.4 kA/cm<
 sup>
 2<
 /sup>
 . An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.