Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.38 Electronics, communications engineering
• Thông tin xuất bản: Oak Ridge, Tenn. : Oak Ridge, Tenn. : Oak Ridge National Laboratory ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2017
• Mô tả vật lý: Size: p. 9319-9332 : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 255919
• Chủ đề: 1. 30 direct energy conversion; 2. Crosstalk suppression; 3. Fast switching; 4. Gate drive ic; 5. Intelligent gate drive (igd); 6. Phase-leg configuration; 7. Silicon carbide (sic)

Tóm tắt

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.