Intelligent Gate Drive for Fast Switching and Crosstalk Suppression of SiC Devices [electronic resource]

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Tác giả:

Ngôn ngữ: eng

Ký hiệu phân loại: 621.38 Electronics, communications engineering

Thông tin xuất bản: Oak Ridge, Tenn. : Oak Ridge, Tenn. : Oak Ridge National Laboratory ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2017

Mô tả vật lý: Size: p. 9319-9332 : , digital, PDF file.

Bộ sưu tập: Metadata

ID: 255919

This study presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.
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