Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.344 Applied physics
• Thông tin xuất bản: Albuquerque, N.M. : Oak Ridge, Tenn. : Sandia National Laboratories. ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2017
• Mô tả vật lý: Size: p. 9333-9341 : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 255925
• Chủ đề: 1. 30 direct energy conversion; 2. Photoconductive semiconductor switches; 3. Power diodes; 4. Power electronics; 5. Reverse recovery; 6. Ultra-short pulse lasers; 7. Wide-bandgap devices

Tóm tắt

 A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 ? 1 A) and reverse voltages (0 ? 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes
  the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 ? 100 V and forward current of 1 ? 100 mA.