Reliability and Lifetime Prediction Model of Sintered Silver under High-Temperature Cycling [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 553.8 Gems
• Thông tin xuất bản: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Energy Efficiency and Renewable Energy ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2021
• Mô tả vật lý: Size: p. 1-1 : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 256049
• Chủ đề: 1. 30 direct energy conversion; 2. Failure mechanisms; 3. High-lead solder; 4. High-temperature power electronics; 5. Lifetime model; 6. Reliability; 7. Sintered silver; 8. Thermomechanical modeling

Tóm tắt

Although excellent reliability has been reported for sintered silver as a die-attach material under both thermal and power cycling loads in power electronics applications, the promise of this material as a large-area attachment at temperatures beyond 200 degrees C needs to be investigated. This paper presents insights into the thermomechanical behavior and reliability of sintered silver under extreme thermal cycling conditions. In this study, we bonded sintered silver samples and subjected it to a thermal cycling profile of -40 �C to 200 �C with high ramp rates. We periodically monitored samples under thermal cycling to detect the presence of any failure mechanisms using a scanning acoustic microscope. We also included 95Pb5Sn solder in the study to obtain reference data. Results show the occurrence of cracks in sintered silver followed by a rapid rate of crack growth that exceeded the failure criterion in just 50 cycles. The predominant failure mechanism we observed was adhesive failure. As a large-area attachment, solder exhibited a higher reliability than sintered silver but failed within 100 cycles. Finally, we performed thermomechanical modeling to compute strain energy density values and correlated these with the experimentally observed crack growth rates to formulate a lifetime prediction model for sintered silver.