Ga2O3 Packaging and Thermal Management Challenges and Opportunities [electronic resource]

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Tác giả:

Ngôn ngữ: eng

Ký hiệu phân loại: 621.31 Generation, modification, storage, transmission of electric power

Thông tin xuất bản: Golden, Colo. : Oak Ridge, Tenn. : National Renewable Energy Laboratory (U.S.) ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2019

Mô tả vật lý: Size: 2.3 MB : , digital, PDF file.

Bộ sưu tập: Metadata

ID: 256175

This project addresses the early-stage research and development to design and build packages that enable practical utilization of Ga2O3 semiconductor devices in power electronic circuits. The project will encompass electrical, thermal, thermomechanical and reliability aspects in the package design. As compared to silicon (Si), SiC or GaN-based packaging, using a Ga2O3 device will require significant research and innovations in the attachment of the oxide device to substrates, attachment of the substrate to the baseplate/heat exchanger, appropriate electrical interconnections, as well as the type and location of the thermal management solutions. A thorough understanding and characterization of the thermal transport properties of the Ga2O3 device layer is also essential to understand and quantify the package performance. Addressing all these aspects will result in a high-performance, low-cost and reliable package.
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