Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package [electronic resource] : Preprint

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.3 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting
• Thông tin xuất bản: Golden, Colo. : Oak Ridge, Tenn. : National Renewable Energy Laboratory (U.S.) ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2019
• Mô tả vật lý: Size: 1.0 MB : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 256214
• Chủ đề: 1. 30 direct energy conversion; 2. Finite-element; 3. Gallium oxide; 4. High-temperature packaging; 5. Power electronics; 6. Thermal modeling; 7. Thermomechanical modeling; 8. Wide-bandgap devices

Tóm tắt

 The power electronics industry is currently undergoing a major transition by replacing silicon devices with wide-bandgap devices. Gallium oxide devices have the potential to accelerate this transition by offering comparable or even superior performance to other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes
  however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.