High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method [electronic resource]

• Ngôn ngữ: eng
• Ký hiệu phân loại: 621.3875 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting
• Thông tin xuất bản: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Science ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2012
• Mô tả vật lý: Medium: ED : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 262238
• Chủ đề: 1. 60; 2. Annealing; 3. Cdznte:in; 4. Hall effect; 5. High-pressure bridgman growth method; 6. Inclusions; 7. Point defects; 8. Single crystals

Tóm tắt

We evaluated the effect of high-temperature treatment of Cd0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ~730 K sharply increased the electrical conductivity (by ~1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kr�ger?s theory of quasi-chemical reactions between point defects in solids.