Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices [electronic resource] : Preprint

• Ngôn ngữ: eng
• Ký hiệu phân loại: 629.87 Other branches of engineering
• Thông tin xuất bản: Golden, Colo. : Oak Ridge, Tenn. : National Renewable Energy Laboratory (U.S.) ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2019
• Mô tả vật lý: Size: 638 KB : , digital, PDF file.
• Bộ sưu tập: Metadata
• ID: 266254
• Chủ đề: 1. 33 advanced propulsion systems; 2. Gallium oxide devices; 3. Power electronics; 4. Power semiconductor devices; 5. Wide band-gap devices

Tóm tắt

Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.