Ion Emittance Growth Due to Focusing Modulation from Slipping Electron Bunch [electronic resource]

 0 Người đánh giá. Xếp hạng trung bình 0

Tác giả:

Ngôn ngữ: eng

Ký hiệu phân loại: 621.3852 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting

Thông tin xuất bản: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Science ; Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2015

Mô tả vật lý: Size: 17 p. : , digital, PDF file.

Bộ sưu tập: Metadata

ID: 268243

Low energy RHIC operation has to be operated at an energy ranging from ? = 4.1 to ? = 10. The energy variation causes the change of revolution frequency. While the rf system for the circulating ion will operate at an exact harmonic of the revolution frequency (h=60 for 4.5 MHz rf and h=360 for 28 MHz rf.), the superconducting rf system for the cooling electron beam does not have a frequency tuning range that is wide enough to cover the required changes of revolution frequency. As a result, electron bunches will sit at different locations along the ion bunch from turn to turn, i.e. the slipping of the electron bunch with respect to the circulating ion bunch. At cooling section, ions see a coherent focusing force due to the electrons? space charge, which differs from turn to turn due to the slipping. We will try to estimate how this irregular focusing affects the transverse emittance of the ion bunch.
Tạo bộ sưu tập với mã QR

THƯ VIỆN - TRƯỜNG ĐẠI HỌC CÔNG NGHỆ TP.HCM

ĐT: (028) 71010608 | Email: tt.thuvien@hutech.edu.vn

Copyright @2024 THƯ VIỆN HUTECH