Introduction: Magnesium tin silicide (MgSiSn) is known as a good-thermoelectric-performance, safe and cost-efficient alloy material. The goal of this work is to design a magnetron co-sputtering configuration for depositing alloy thin films from three independent metal targets including magnesium (Mg), silicon (Si) and tin (Sn). Methods: By this solution, the elemental composition of the MgSiSn thin films can be effectively controlled through changing the sputtering power of the individual magnetron. The actual values of elemental composition in the as-deposited films were verified by using energy-dispersive X-ray spectroscopy. The as-deposited thin films were investigated carefully by using the X-ray diffraction to recognize crystalline structure characteristics. Most importantly, typically thermoelectric parameters including Seebeck coefficient, electrical conductivity and power factor were indicated as functions of temperature. Results: The XRD analysis exhibits cubic anti-fluorite-type structure characteristics of the MgSiSn films
however, the presence of the segregated Mg phase is still observed. The testing results for the representative MgSiSn thin film with good adherence show the power factor of PF ~20.5×10−3 W/mK2, as a result of Seebeck coefficient of S ~159 µV/K and electrical conductivity of σ ~8200 S/cm, at 325 K. At higher temperature than 473 K, the semiconducting behavior of the films tends to transform from p-type to n-type. Conclusion: The three-target co-sputtering configuration shows the possibility of successfully preparing alloy MgSiSn thin films with good adherence on Si substrate. Furthermore, the testing result suggests that the as-deposited MgSiSn thin films have some potential thermoelectric characteristics, which can be improved more significantly.