Magnetic memory technology : spin-transfer-torque MRAM and beyond

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Tác giả: Chi-Feng Pai, Denny D Tang

Ngôn ngữ: eng

ISBN-13: 978-1119562221

Ký hiệu phân loại: 621.39763 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting

Thông tin xuất bản: Hoboken : Wiley-IEEE Press, 2021

Mô tả vật lý: 1 PDF.

Bộ sưu tập: Tài liệu truy cập mở

ID: 314845

"This book first provides the basics of magnetism that electrical engineering students in the semiconductor curriculum can easily understand. Then, it goes one step forward to discuss electron spin. Following the above background discussion, readers are taught the physics of magnetic tunnel junction device (MTJ), the work horse of MRAM, for memory applications. At the end of this book, the author gives a comparison of emerging non-volatile memories (PCM, ReRAM, FeRAM and MRAM). The author also explores MRAM's unique quality among emerging memories, in that is the only one in which the atoms in the device do not move when switching states. This property makes it the most reliable and low power"-- Provided by publisher.
Includes bibliographical references and index.
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