Molecular beam epitaxy : materials and applications for electronics and optoelectronics

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Tác giả: Hajime Asahi, Yoshiji Horikoshi

Ngôn ngữ: eng

ISBN-13: 978-1119354987

Ký hiệu phân loại: 621.38152 Electrical, magnetic, optical, communications, computer engineering; electronics, lighting

Thông tin xuất bản: Hoboken, New Jersey : John Wiley & Sons, Inc., 2019.

Mô tả vật lý: 1 PDF (512 pages).

Bộ sưu tập: Tài liệu truy cập mở

ID: 315154

 Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy "MBE" technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE
  MBE technology for electronic devices application
  MBE for optoelectronic devices
  Magnetic semiconductors and spintronics devices
  and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE
  principles of MBE and fundamental mechanism of MBE growth
  migration enhanced epitaxy and its application
  quantum dot formation and selective area growth by MBE
  MBE of III-nitride semiconductors for electronic devices
  MBE for Tunnel-FETs
  applications of III-V semiconductor quantum dots in optoelectronic devices
  MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet
  MBE of III-V semiconductors for mid-infrared photodetectors and solar cells
  dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices
  applications of bismuth-containing III–
 V semiconductors in devices
  MBE growth and device applications of Ga2O3
  Heterovalent semiconductor structures and their device applications
  and more. . Includes chapters on the fundamentals of MBE. Covers new challenging researches in MBE and new technologies. Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners. Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Includes bibliographical references and index.
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