Tính chất quang của màng mỏng InSb trên đế c-sapphire được chế tạo bằng phương pháp lắng đọng laser xung

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Tác giả: Văn Tuấn Nguyễn, Vũ Tùng Nguyễn, Văn Thìn Phạm, Đình Phong Phùng, Quang Đạt Trần

Ngôn ngữ: vie

Ký hiệu phân loại:

Thông tin xuất bản: Journal of Science and Technique, 2022

Mô tả vật lý: tr.5

Bộ sưu tập: Metadata

ID: 330335

Thêm vào giỏ Liên kết toàn văn

1 μm-InSb crystallized thin films were successfully deposited based on Pulsed Laser Deposition (PLD) approach, and later characterized. XRD analysis reveals that the InSb films with Sb in excess are constituted by a wide range of various nanocrystals, of which the sizes are from 148 nm to 322 nm corresponding to different deposited temperatures (Td) ranging from 250°C to 400°C. While films show polycrystalline properties at low Td (<
400°C), nearly single crystallized films have been achieved at higher Td with space group structure of Zinc Blende. Microstructural analysis performed by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) agrees with results obtained from XRD and suggests that microstructure is transformed from small grains in size to bigger ones with increasing Td. In addition, Raman scattering spectroscopy illustrates that the fabricated films have a variety modes of vibration, which can be 2TA, TO-TA, Sb-Sb, TO, and LO depending on the sample Td. By means of Fourier transform infrared (FTIR) measurement, a decrease in the band-gap energy of deposited films is observed with increasing Td.Màng mỏng 1 μm-InSb kết tinh trên đế c-sapphire được chế tạo bằng phương pháp lắng đọng laser xung (PLD) và được nghiên cứu. Phân tích nhiễu xạ tia X (XRD) cho thấy màng InSb giàu Sb được cấu tạo từ các tinh thể nano ở các kích thước khác nhau từ 148 nm đến 322 nm, trong dải nhiệt độ tạo mẫu (Td) 250°C-400°C. Ở Td thấp (<
400°C), màng InSb kết tinh với cấu trúc đa tinh thể, trong khi ở 400°C màng có cấu trúc gần như đơn tinh thể của họ tinh thể zinc blende. Ảnh hiển vi điện tử quét (SEM) và lực nguyên tử (AFM) phù hợp với kết quả phân tích XRD, và cho thấy màng có cấu trúc vi mô biến đổi từ cấu trúc vi hạt ở Td thấp sang cấu trúc gần như liên tục (hạt to) ở Td cao hơn. Phép đo phổ tán xạ Raman cho thấy màng chế tạo có các phương thức dao động khác nhau (2TA, TO-TA, Sb-Sb, TO, và LO) phụ thuộc vào Td. Phép đo phổ hồng ngoại biến đổi Fourier (FTIR) cho thấy có sự giảm năng lượng vùng cấm theo Td.

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