Recent Advances in III-Nitride Semiconductors

• Tác giả: Peng Chen, Zhizhong Chen
• Ngôn ngữ: eng
• ISBN-13: 978-3036586243
• ISBN-13: 978-3036586250
• ISBN: books978-3-0365-8625-0
• Thông tin xuất bản: MDPI - Multidisciplinary Digital Publishing Institute 2023
• Mô tả vật lý: 1 electronic resource (236 p.)
• Bộ sưu tập: Tài liệu truy cập mở
• ID: 374039
• Chủ đề: 1. AlGaN; 2. GaN; 3. Nitrides; 4. History of engineering & technology; 5. Technology: general issues

Tóm tắt

 Gallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "Recent Advances in III-Nitride Semiconductors" provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures
  characterization of the materials and heterostructures
  GaN-based novel devices, including emission, detection and power devices
  application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.