RAMAN SPECTROSCOPY OF GaN/AlxGa1-xN/AlN/Si STRUCTURES

• Tác giả: Huy Hoang Luc, Linh Chi Nguyen, Van Hai Pham
• Ngôn ngữ: Vie
• Thông tin xuất bản: Tạp chí Khoa học Trường Đại học Sư phạm Hà Nội: Khoa học Tự nhiên 2019
• Bộ sưu tập: Metadata
• ID: 395849

Tóm tắt

 In this work, the Raman and IR active vibrational modes of GaNstructure were calculated using correlation method. All the experimental Ramanpeaks were assigned in the Raman spectra of GaN/AlxGa1-xN/AlN/Si structures,which were prepared using metalorganic chemical vapor deposition (MOCVD)technique. The effect of AlxGa1-xN buffer layer with various of x values (0.011
 0.02
  0.037
  0.053
  0.49
  1) on the structure properties of GaN was studied by meanof Raman spectroscopy. The stabilization of the position and the change of fullwidth at half maximum (FWHM) of E2 mode in the Raman spectra ofGaN/AlxGa1-xN/AlN/Si structures confirmed the high crystalline quality of theGaN layer