The nanostructured ZnO film is fabricated by us using thermal evaporation technique to create a Zn metal film on a glass substrate covered with transparent conductive material ITO, then annealing in air at different temperatures 3000C, 3500C, 4000C, 4500C, 5000C for 3-4 hours. to create zinc oxide (ZnO) films. After thermal oxidation, the membranes were studied for their structural characteristics, phase composition and morphology. To study the photovoltaic properties of the fabricated ZnO film, a photovoltaic cell containing an electrolyte solution containing 1 M KCl and 0.1 M Na2S with a counter electrode of a Platinum film, shines with a halogen lamp and UV. The results show that ZnO incubated at 4500C gives the best results (VOC and JSC under halogen lamp are 261 mV and 30 μA/cm2, while these values are 323 mV and 50 μA/cm2 under UV lamp).