Ultralow-Resistance Contacts to Heavily Doped p-Type Nb

• Tác giả: Ageeth A Bol, Rebecca A Dawley, Nitzan Hirshberg, Khondker Shihabul Hoque, Steven J Koester, Seungjun Lee, Ruixue Li, Tony Low, Alexander S McLeod, Michael L Odlyzko, Jeff J P M Schulpen
• Ngôn ngữ: eng
• Thông tin xuất bản: United States : ACS applied materials & interfaces , 2025
• Bộ sưu tập: NCBI
• ID: 463672

Tóm tắt

Transition metal dichalcogenides (TMDs) are an important class of materials for future microelectronics. Of particular interest are TMDs deposited by atomic layer deposition (ALD) since this technique allows both back-end-of-line (BEOL) compatible deposition and the ability to create heavily doped regions for contact formation. In this work, we characterize ∼3 nm-thick heavily doped Nb