New logic in memory (LiM) architectures, able to unify memory and logic functionalities into a single component, are highly promising for executing self-learning algorithms such as artificial neural networks (ANNs), with lower energy requirements. The multigated reconfigurable field effect transistor (RFET) is a novel type of logic device that can be fully reconfigured at run-time, promising to be a very versatile platform for logic applications. If equipped with a memory element, then it would represent the ideal building block for LiM-enabling hardware with embedded self-learning capabilities. To reach this goal, here we investigate the integration of a ferroelectric Hf