Tổng hợp và đặc trưng tính chất điện của tiếp giáp dị thể graphene-MoS2-graphene=Synthesis and electrical characteristics of graphene-MoS2-graphene lateral heterostructure

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Tác giả: Thị Huyền Nguyễn

Ngôn ngữ: vie

Ký hiệu phân loại:

Thông tin xuất bản: Khoa học và Công nghệ Việt Nam, 2025

Mô tả vật lý: tr.45663

Bộ sưu tập: Báo, Tạp chí

ID: 478453

Thêm vào giỏ

Với các đặc tính điện và quang nổi trội, vật liệu MoS2 trở thành một trong những vật liệu tiềm năng cho các ứng dụng logic và photodetector. Tuy nhiên, sự hình thành các tiếp xúc Schottky giữa kim loại và MoS2 sẽ giới hạn hiệu suất của thiết bị. Gần đây, nhiều nỗ lực đã được thực hiện để giải quyết thách thức này bằng việc sử dụng các điện cực kim loại có công thoát thấp, ủ ở nhiệt độ cao hay kỹ thuật chuyển pha. Graphene được biết đến như một điện cực lý tưởng cho các linh kiện điện tử thế hệ mới do tính dẫn điện ưu việt của nó cũng như có thể dễ dàng thay đổi mức Fermi. Trong nghiên cứu này, chúng tôi đã chế tạo thành công tiếp giáp dị thể graphene-MoS2 bằng phương pháp lắng đọng hóa học pha hơi (CVD) ở áp suất khí quyển, trong đó, cạnh của khuôn mẫu graphene được sử dụng như các vị trí mầm cho quá trình mọc MoS2. Sự hình thành của tiếp giáp dị thể được khẳng định thông qua phép đo ảnh quang học và lực nguyên tử. Phổ tán xạ Raman và Raman mapping được sử dụng để đánh giá chất lượng và sự đồng đều của tiếp giáp dị thể. Linh kiện được chế tạo trên tiếp giáp dị thể graphene-MoS2 thể hiện đặc tính truyền dẫn như bán dẫn loại n, vật liệu MoS2 đóng vai trò là kênh dẫn trong khi graphene đóng vai trò như điện cực. Thêm vào đó, đặc tính đầu ra chỉ ra rằng có sự hình thành tiếp xúc omic giữa graphene và MoS2.With outstanding electronic and optical properties, molybdenum disulfide (MoS2) has become one of the potential materials for logic applications and photodetector. However, Schottky barrier formation based on metal-MoS2 contacts has limited device performance. Recently, many attempts have been devoted to addressing this challenge by using low-work function metal electrodes, high-temperature annealing, or phase engineering. Graphene is known as an ideal electrode for the interconnections and wiring of next-generation devices due to its superior electrical conductivity and ease of tuning its Fermi level. In this study, we successfully fabricated graphene-MoS2 lateral heterostructure by the chemical vapour deposition (CVD) technique under atmospheric pressure, in which, the edges of the graphene template served as nucleation sites for the growth of MoS2. The morphology of the heterojunction was confirmed by optical microscopy and atomic force microscopy. Raman and Raman mapping were used to estimate the quality and uniformity of the heterojunction. The device fabricated on the graphene-MoS2 heterojunction exhibits n-type semiconductor transport characteristics, with MoS2 serving as the conducting channel while graphene acts as the electrode. Additionally, the output characterisation showed that there is a formation of an ohmic contact between graphene and MoS2.

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