Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

• Tác giả: Minh Thinh Lam, Quoc Cuong Le, Vo Ke Thanh Ngo, Chi Cuong Nguyen, Xuan Thang Trinh, Huu Ly Truong, Dinh Duy Phuc Vuong
• Ngôn ngữ: eng
• Thông tin xuất bản: Vietnam Journal of Science, Technology and Engineering - C, 2024
• Mô tả vật lý: tr.32
• Bộ sưu tập: Metadata
• ID: 481701

Tóm tắt

This study analyses the square diaphragm structure of a micro-electro-mechanical system (MEMS) pressure sensor using the finite element method (FEM). The research investigates an enhancement in stress distribution achieved by coating a silicon (Si) diaphragm with a thin layer of silicon carbide (3C-SiC)...