This paper presents an active Z-source multilevel inverter that incorporates an additional semiconductor switch and diode into the impedancesource network to enhance voltage gain. The integration of these components into the Z-source network significantly reduces the voltage stress on the inverter components, as demonstrated through comparisons with previous studies. The innovative topology features two key elements: an AqZS, which improves the inverter's voltage gain, and a three-level T-type inverter at the forefront. The shoot-through signal is integrated into the operating state of the three-level T-type inverter, enabling control of the input voltage on the appropriate side of the inverter. This is achieved by charging and discharging components in the reactive source network, resulting in a high voltage gain. The paper introduces the discontinuous pulse width modulation (DPWM) technique to control the inverter. This control method combined with ST state ensures no additional switching compared to other conventional inverters. To highlight the contributions of this paper, a detailed analysis of the steady-state operational principles of the proposed topology and its control method is presented. Furthermore, simulation and experimental results are provided to validate the accuracy and effectiveness of the proposed topology and method.