Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices.

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Tác giả: Yong Soo Cho, Junjie Guo, Jingyi Hu, Ye Seul Jung, Ruijie Li, Wenxi Li, Zhenjiang Li, PeiChi Liao, Kaihui Liu, Lei Liu, Peizhi Liu, Yijie Luo, U Sasaki, Huacong Sun, Huifeng Tian, Lifen Wang, Yihan Wang, Guodong Xue, Zhixin Yao, Ge Yin, Lina Yang Zhang, Xuanyu Zhang, Yanfeng Zhang

Ngôn ngữ: eng

Ký hiệu phân loại: 384.55455 Wireless communication

Thông tin xuất bản: England : Nature communications , 2025

Mô tả vật lý:

Bộ sưu tập: NCBI

ID: 49013

Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-k (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS
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