Hạn chế sự liên khuếch tán giữa màng Germanium và đế silic bằng màng đa lớp Ge/Carbon ứng dụng trong lĩnh vực quang điện tử tích hợp

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Tác giả: Thị Kim Phượng Lương, Trúc Ly Tịnh

Ngôn ngữ: vie

Ký hiệu phân loại: 546.28 Inorganic chemistry

Thông tin xuất bản: Khoa học và Công nghệ (Đại học Thái Nguyên), 2018

Mô tả vật lý: 67-72

Bộ sưu tập: Metadata

ID: 491486

Thêm vào giỏ

Germanium (Ge) and silicon (Si) are indirect band gap materials, thus they have low photoluminescence effeciency. It is shown that a strongly optical gain could be obtained when applying a tensile strain and n-doping in the Ge layers to modifier it's energy structure band. Post-thermal treatment after growing is a necessary step to enhance tensile strain value and crystal quality of the Ge film. When thermal annealing is set up at high temperature (about 900 oC) during some minutes, the interdiffusion effect between Ge and Si occurs. Resulting a greatly affect on the optical properties of Ge/Si. In this study, the inter-diffusion is suppressed by C/Ge multi-layers with the Ge film thickness is about 18nm and C layers thickness is about 4 mono layers. The film is grown by Molecular Beam Epitaxy (MBE) technique. The suface quality is investigated using Atomic Force Microscopy (AFM) and High Resolution Transmission Electron Microscopy (HR-TEM). The growth process is directly controlled owing to using Reflection of High Energy Electron Diffraction (RHEED). The effeciency of C/Ge interdiffusion barriers is checked by Secondary Ion Mass Spectrometry (SIMS).Sự liên khuếch tán được khống chế bằng các màng đa lớp C/Ge với độ dày các màng Ge khoảng 18nm và các lớp carbon chỉ có độ dày khoảng bốn đơn lớp. Màng Ge được tăng trưởng trên đế Si định hướng (100) bằng kỹ thuật epitaxy chùm phân tử (MBE). Chất lượng bề mặt của màng và lớp Ge được khảo sát bằng kính hiển vi lực nguyên tử (AFM) và kính hiển vi điện tử truyền qua độ phân giải cao (HR-TEM). Quá trình tăng trưởng của các đa lớp được điều khiển trực tiếp nhờ thiết bị nhiễu xạ điện tử phản xạ năng lượng cao (RHEED). Khả năng ngăn ngừa quá trình liên khuếch tán giữa Ge/Si của màng đa lớp C/Ge được kiểm tra bằng phổ khối ion thứ cấp (SIMS).

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