Nghiên cứu chế tạo màng mỏng CdS:Zn ứng dụng làm lớp đệm trong pin mặt trời màng mỏng CuInS2

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Tác giả: Thành Lợi Mai, Thanh Thái Trần

Ngôn ngữ: vie

Ký hiệu phân loại: 621.35 Superconductivity

Thông tin xuất bản: Tạp chí Khoa học - Đại học Quy Nhơn, 2018

Mô tả vật lý: 105-111

Bộ sưu tập: Metadata

ID: 492097

Thêm vào giỏ

Nghiên cứu ảnh hưởng của sự pha tạp Zn lên tính chất vật lý của các màng mỏng CdS không pha tạp và CdS pha tạp Zn (CdS:Zn). Kết quả cho thấy các màng chế tạo đều có cấu trúc đa tinh thể, trùng khớp pha CdS với cấu trúc hecxagonal. Tính chất quang của màng thể hiện màng CdS:Zn có độ rộng vùng cấm quang tăng không đáng kể so với màng CdS không pha tạp. Tất cả các màng CdS:Zn có điện trở suất cùng bậc 103Ω.cm và màng pha tạp Zn với nồng độ 6wt.% có điện trở suất nhỏ nhất 1,2.10-3Ω.cm. Pin mặt trời IZO/CdS:Zn/ CuInS2 /Me cũng được chế tạo để đánh giá khả năng đáp ứng quang điện của màng CdS:Zn.Undoped and Zn doped CdS (CdS:Zn) thin films were prepared by the ultrasonic spray pyrolysis deposition (USPD) technique. The effect of Zn doping on the physical properties of the films were investigated. It was observed that all the deposited films were polycrystalline, fitting well with hexagonal type CdS. The optical properties of undoped and Zn doped CdS films showed that the optical band gap of the Zn doped CdS is slightly bigger than its undoped CdS. All Zn doped CdS films have resistivity in the order of 103Ω.cm and the CdS:Zn film prepared 6wt.% Zn concentration had a minimum resistivity of 1,2.10-3Ω.cm. The glass/ IZO/CdS: Zn/ CuInS2/ Me solar cell was also produced to evaluate the photovoltaic property of CdS: Zn thin films.

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