Photolithography-Induced Doping and Interface Modulation for High-Performance Monolayer WSe

• Tác giả: Shu-Jui Chang, Shao-Heng Chen, Nien-En Chiang, Ying-Zhan Chiu, Zih-Yun Fong, Ching-Hao Hsu, Yu-Wei Hsu, Tsung-En Lee, Yu-Tung Lin, I-Chih Ni, Ming-Yu Shen, Chih-I Wu
• Ngôn ngữ: eng
• Ký hiệu phân loại: 553.453 Tin
• Thông tin xuất bản: United States : Nano letters , 2025
• Bộ sưu tập: NCBI
• ID: 493238

Tóm tắt

To mitigate Fermi-level pinning (FLP) at the contact of two-dimensional (2D) transition metal dichalcogenides and enhance their hole carrier concentration, a 1.8 nm-thick p-doping layer is formed via photolithography. This surface treatment significantly reduces the contact resistance (