Sự tăng trưởng ghép của các điểm lượng tử Ge1-xMnx ở nhiệt độ Curie cao trên Si(100) bằng tự ghép nối

• Ngôn ngữ: vie
• Ký hiệu phân loại: 548.5 Crystallization
• Thông tin xuất bản: Communications in Physics, 2014
• Mô tả vật lý: 69-77
• Bộ sưu tập: Metadata
• ID: 495968

Tóm tắt

The authors report on successful growth of epitaxial high Curie-temperature Ge1-xMnx quantum dots on Si (001) substrates using the self-assembled approach. By decreasing the growth temperature down to 400°C, the authors show that the Mn diffusion into the Si substrate can be neglected. No indication of secondary phases or clusters was observed. Ge1-xMnx quantum dots were found to be epitaxial and perfectly coherent to the Si substrate. the authors also evidence that the ferromagnetic ordering in Ge1-xMnx quantum dots persists up to a temperature higher 320 K. It is believed that single-crystalline quantum dots exhibiting a high Curie temperature are potential candidates for the realization of nanoscale spintronic devices.