Sự kìm hãm các điện tử trong MeV Au2+ cấy Si: Nghiên cứu tán xạ Raman

• Ngôn ngữ: vie
• Ký hiệu phân loại: 570.2825 Miscellany
• Thông tin xuất bản: Nanoscience and Nanotechnology, 2014
• Mô tả vật lý: 45296
• Bộ sưu tập: Metadata
• ID: 506363

Tóm tắt

Structural modifications in silicon matrix due to heavy ion (Au2+) implantation are studied using mainly Raman spectroscopy and x-ray diffraction (XRD) method. Raman spectra show a red-shift in their peak position along with line-width broadening with respect to increase in implantation fluence. This is explained taking both phonon confinement and stress into account. Heavy ion implantation introduces tensile stress in the silicon matrix. The amount of stress produced as a function of fluence has been calculated. A proposed model explaining the Raman shift and peak broadening is discussed in detail. XRD results also go in-line with the above analysis.