Nghiên cứu hiệu suất RF của xung quanh cổng MOSFET với chồng lấp và trải lót cổng

• Ngôn ngữ: vie
• Ký hiệu phân loại: 372.8 Other studies
• Thông tin xuất bản: Nanoscience and Nanotechnology, 2014
• Mô tả vật lý: 45297
• Bộ sưu tập: Metadata
• ID: 506700

Tóm tắt

In this paper a simulation study is used to investigate the RF performance of surrounding gate (SRG) MOSFET. The effect of nonsymmetrical gate structure caused by non- ideality in fabrication process has also been taken care into consideration. The important RF figure-ofmerits such as unity-gain cut-off frequency Fr and maximum operating frequency fMAX are studied with the help of a 2D device simulator. Their trends related to the variation of different design parameters such as radius, oxide thickness, gate length, and doping along the downscaling have also been reported.