Reactive Plasma Deposition of ITO as an Efficient Buffer Layer for Inverted Perovskite Solar Cells.

• Tác giả: Tongle Bu, Chao Chen, Junbo Gong, Yan Jiang, Jianmin Li, Wang Li, Shiju Lin, Xinxing Liu, Chen Shen, Jiang Tang, Heming Wang, Sheng Wang, Xudong Xiao, Can Yuan, Junjun Zhang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 920.71 Men
• Thông tin xuất bản: Germany : Advanced materials (Deerfield Beach, Fla.) , 2025
• Bộ sưu tập: NCBI
• ID: 51057

Tóm tắt

In this study, the potential of reactive plasma deposition (RPD) is demonstrated for fabricating indium tin oxide (ITO) as an efficient buffer layer in inverted wide-bandgap perovskite solar cells (PSCs). This method results in a certified efficiency of 21.33% for wide-bandgap PSCs, demonstrating superior thermal stability and operational stability. The optimized devices achieve an impressive open-circuit voltage (V