Defect Passivating Hole Transporting Material for Large-Area and Stable Perovskite Quantum-Dot Light-Emitting Diodes.

• Tác giả: Hans Ågren, Hosein Ahangar, Glib Baryshnikov, Fatemeh Arami Ghahfarokhi, Jing Huang, Artem V Kuklin, Xiansheng Li, Xin Luo, Esmaeil Sheibani, Changting Wei, Bo Xu, Shiyu Yang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 369.21 International societies
• Thông tin xuất bản: United States : ACS nano , 2025
• Bộ sưu tập: NCBI
• ID: 54754

Tóm tắt

Organic hole-transporting materials (HTMs) with high hole mobility and a defect passivating ability are critical for improving the performance and stability of perovskite optoelectronics, including perovskite quantum dot light-emitting diodes (Pe-QLEDs) and perovskite solar cells. In this study, we designed two small-molecule HTMs, termed