Gia tốc trục z kiểu điện dụng chế tạo bằng công nghệ vi cơ silic trên phiến soi

• Ngôn ngữ: vie
• Ký hiệu phân loại: 538.8 Magnetism
• Thông tin xuất bản: Khoa học và Công nghệ các trường đại học kỹ thuật, 2013
• Mô tả vật lý: 177-181
• Bộ sưu tập: Metadata
• ID: 557540

Tóm tắt

In this paper, the authors report design, fabrication and operation characteristic of a capacitive type Z-axis accelerometer. The external acceleration is measured by detecting capacitance change of a SOl capacitor. The capacitor is composed of two electrode plates formed from top and substrate silicon layers and an air dielectric layer formed by etching the buried-oxide layer of Silicon-On-Insulator (SOl) wafer. Finite element analysis using ANSYS software was employed for design and simulation of the accelerometer. The accelerometer was fabricated by SOl-based micromachining with one-mask photolithography process. The sensitivity of the accelerometer was experimentally measured to be 0.21 fF/g. The operation of the accelerometer was linear in the range of investigated acceleration from 0 to 4g.