Heterolayered Pb(Zr1-x Tix)O3 thin films consisting of multilayered Pb(Zr0.6Ti0.4)03 (P60, Zr-rich) and Pb(Zr0.4 Ti0.6)O3 (P40, Ti-rich) on Pt/Ti/SiO2/Si substrate were successfully fabricated via sol-gel route. Both the ferroelectric and dielectric properties of the heterolayered P60/P40 thin films were significantly improved as compared to those of pure P60 and P40 thin films. Namely, the values of remnant polarization, coercive field and dielectric constant were 18.6 uC/cm2, 70.7 kV/cm and 940, respectively for heterolayered P60/P40 thin films. While these values obtained for multilayered P60 and P40 thin films were 14.6 uC/cm2, 54.2 kV/cm and 860, and 17.1 uC/cm2, 90.6 kV/cm and 800, respectively. The improvement in ferroelectric properties of the heterolayered P60/P40 thin films compared to those of the multilayered P60 and P40 thin films can be accounted for the field-induced coupling effect between the rhombohedral and tetragonal layers.