When the sunlight illuminates the front surface of solar cell, part of the incident energy reflects from the surface, and part of incident energy transmits to the inside of solar cell and converts into electrical energy. Typically, the reflectivity of bare silicon surface is quite higher
more than 30 percent of incident sunlight can be reflected. The aim of this work is to reduce the reflection loss on the surface of solar cell using the method of texturing the front surface of Si and determine optimal ratio of HF-HNO3-CH3COOH/H2O to reflectance reduction for multi- silicon wafer when etching are employed. At the optimal ratio HF-HNO3-CH3COOH/H2O = l/4/5, the reduction in reflectance obtained for a mc-Si wafer is about 15 percent (from 37 percent to 22 percent). The surface morphology obtained by using Scanning Electronic Microscope (SEM) shows a good micropores distribution with the depth of holes from 3 to 5 um.