Two-Dimensional Cr

• Tác giả: Yang Chen, Jiantao Du, Xidong Duan, Ya Feng, Yukun Guo, Kun He, Min Hong, Yanglong Hou, Changmeng Huan, Bailing Li, Bo Li, Jia Li, Lei Liao, Miaomiao Liu, Shaojun Liu, Xingqiang Liu, Yuan Liu, Jianhang Nie, Jingmei Tang, Zhongming Wei, Ruixia Wu, Sumei Wu, Chen Yi, Hongmei Zhang
• Ngôn ngữ: eng
• Ký hiệu phân loại: 322.5 Armed services
• Thông tin xuất bản: Germany : Advanced materials (Deerfield Beach, Fla.) , 2025
• Bộ sưu tập: NCBI
• ID: 57706

Tóm tắt

Spin-orbit torque (SOT) magnetic memory technology has garnered significant attention due to its ability to enable field-free switching of magnets with strong perpendicular magnetic anisotropy (PMA). However, concerns regarding power consumption of SOT-memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor-deposited two-dimensional (2D) Cr