Spintronic devices based on the electrical manipulation of magnetic chiral domain walls (DWs) within magnetic nanowires promise advanced memory and logic with high speed and density. However, error-free positioning of the DWs along the magnetic nanowires is challenging. Here, we demonstrate reconfigurable domain wall logic and neuronal devices based on the interaction between the DWs and local magnetic inhibitors that are placed in the proximity of the magnetic nanowire. First, we investigate the effect of localized stray fields generated by a nanoscopic magnetic inhibitor on the motion of domain walls moved by current passing through the nanowires. We then show that the localized stray field is sufficient to inhibit or promote the current-induced propagation of chiral DWs depending on the state of the inhibitor. Further, we demonstrate that this allows for a DW-based logic XNOR gate and DW-based neuromorphic devices with leaky integrate-and-fire neuronal functions.